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射频磁控溅射ZrW2O8薄膜的高温退火研究
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国家自然科学基金项目(50372027);江苏省高校自然科学重大基础研究项目(06KJA43010);江苏大学博士创新基金


Effects of Post-Deposition Annealing on ZrW2O8 Thin Films by Radio Frequency Magnetron Sputtering
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    摘要:

    采用ZrW2O8陶瓷靶材,以射频磁控溅射法在不同基片上沉积制备ZrW2O8薄膜。利用X射线衍射(XRD)仪和扫描电子显微镜(SEM)研究靶材性能和退火温度、气氛以及基片对薄膜的相组成、表面形貌的影响。结果表明:ZrW2O8靶材具有较高的纯度和致密度,磁控溅射制备的薄膜为非晶态,在730 ℃左右通氧条件下退火后得到择优生长的ZrW2O8薄膜;在750 ℃左右退火得到三方相ZrW2O8薄膜;在1200 ℃密闭的条件下淬火得到立方相ZrW2O8薄膜;在15到700 ℃温度区间内,制备的立方相ZrW2O8薄膜负热

    Abstract:

    The ZrW2O8 thin film of negative thermal expansion (NTE), as a novel functional material, has various potential applications in optics, microelectronics and micro-machine. The ZrW2O8 thin films were deposited on different substrates by RF magnetron sputtering with pure ZrW2O8 ceramic as target. The performance of target and the effects of post-deposition annealing temperature, atmosphere and substrate on the microstructure and morphology of the ZrW2O8 thin films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results indicate that the target is compact and composed of pure ZrW2O8. The as-deposited ZrW2O8 film shows an amorphous phase. The ZrW2O8 film with preferred orientation can be prepared in oxygen atmosphere by annealing at 730 ℃, the trigonal ZrW2O8 film can be prepared by annealing at 750 ℃, and the cubic ZrW2O8 film can be prepared in a sealed cell at 1200 ℃, and the negative thermal expansion coefficient of the resulting cubic ZrW2O8 film is –14.47×10-6 K-1 in the temperature range from 15 ℃ to 700 ℃. With the increase of annealing temperature, some holes and deficiencies appear in the surface of films

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刘红飞,张志萍,程晓农.射频磁控溅射ZrW2O8薄膜的高温退火研究[J].稀有金属材料与工程,2009,38(7):1284~1287.[Liu Hongfei, Zhang Zhiping, Cheng Xiaonong. Effects of Post-Deposition Annealing on ZrW2O8 Thin Films by Radio Frequency Magnetron Sputtering[J]. Rare Metal Materials and Engineering,2009,38(7):1284~1287.]
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  • 收稿日期:2008-06-24
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