+高级检索
UFeGa5单晶生长及晶体结构研究
DOI:
作者:
作者单位:

作者简介:

通讯作者:

中图分类号:

基金项目:


Single Crystal Growth and Crystal Structure of UFeGa5
Author:
Affiliation:

Fund Project:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
  • |
  • 文章评论
    摘要:

    采用镓自助熔剂的方法生长出了UFeGa5单晶,采用X射线衍射技术和Rietveld方法对UFeGa5晶体结构进行了研究。结果表明:生长出的UFeGa5单晶体结构完整,结晶性好。UFeGa5具有HoCoGa5型四方结构,空间群为P4/mmm(No.123),其晶格常数为a= 0.42533(2) nm, c= 0.67298(3) nm,并得到了透射电镜(TEM)实验验证

    Abstract:

    High-quality single crystals of UFeGa5 were grown by the Ga-flux method. The structure of UFeGa5 single crystal was studied by X-ray diffraction and Rietveld method. The results show that the structure of as-grown UFeGa5 single crystal is good and its crystallinity is well. The UFeGa5 has the HoCoGa5 type-structure with space group P4/mmm (No.123). The lattice constants are a=0.42533(2) nm and c=0.67298(3) nm. The crystal structure results are confirmed by transmission electron microscopy

    参考文献
    相似文献
    引证文献
引用本文

谢东华,赖新春,陈秋云,张延志,徐钦英,罗丽珠. UFeGa5单晶生长及晶体结构研究[J].稀有金属材料与工程,2014,43(3):646~649.[Xie Donghua, Lai Xinchun, Chen Qiuyun, Zhang Yanzhi, Xu Qinying, Luo Lizhu. Single Crystal Growth and Crystal Structure of UFeGa5[J]. Rare Metal Materials and Engineering,2014,43(3):646~649.]
DOI:[doi]

复制
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
  • 引用次数:
历史
  • 收稿日期:2013-03-25
  • 最后修改日期:
  • 录用日期:
  • 在线发布日期: 2014-06-27
  • 出版日期: