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气体放电伏安特性正反欧姆区间对TiN薄膜微观结构及性能的影响
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西安理工大学

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中图分类号:

TB43

基金项目:

国家自然科学基金资助(项目号51271144)


Influence of positive-Ohm and anti-Ohm sections of gas discharge volt-ampere characteristic on microstructure and properties
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Affiliation:

Xi'an University of Technology

Fund Project:

The Natural Science Foundation of Jiangsu Province of China (BK2009104); The Innovation Program of Graduated Student of Jiangsu Province (CXZZ12-731, CXLX11-0388)

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    摘要:

    采用脉冲控制模式将气体放电伏安特性由磁控溅射离子镀的“正欧姆” 区间引入到“反欧姆”区间,并在不同靶电流密度下制备了TiN薄膜。研究了正反欧姆区间对薄膜微观结构及性能的影响。结果表明:在靶电流密度(Itd)大于0.2A?cm-2的反欧姆区间,薄膜具有良好的表面质量和致密程度;且薄膜的硬度和膜基结合强度分别由正欧姆区间Itd为0.11A?cm-2的18.9GPa、4.5N提升到反欧姆区间Itd为0.38 A?cm-2的25.8GPa、18N。

    Abstract:

    The volt-ampere characteristics of gas discharge was introduced form positive-Ohm of magnetron sputtering ion plating into anti-Ohm section using pulse mode and deposited TiN films under different target current density. The influences of positive-Ohm and anti-Ohm sections on the microstructure and properties of the films were studied. The results indicated that in the anti-Ohm section with target current density (Itd) is more than 0.2A?cm-2, the films have good surface quality and density degree, and the hardness and membrane-binding strength were upgraded from 18.9GPa、4.5N in positive-Ohm section (Itd=0.11A?cm-2) to 25.8GPa、18N in anti-Ohm section (Itd=0.38 A?cm-2) respectively.

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郝娟.气体放电伏安特性正反欧姆区间对TiN薄膜微观结构及性能的影响[J].稀有金属材料与工程,2016,45(9):2439~2443.[haojuan. Influence of positive-Ohm and anti-Ohm sections of gas discharge volt-ampere characteristic on microstructure and properties[J]. Rare Metal Materials and Engineering,2016,45(9):2439~2443.]
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历史
  • 收稿日期:2014-07-27
  • 最后修改日期:2014-09-17
  • 录用日期:2014-11-20
  • 在线发布日期: 2016-10-09
  • 出版日期: