Abstract: The different different zirconium content in Pb0.88La0.08(ZrxTi1-x)O3（x=0.30，055，0.80）(abbreviated as PLZT) thick films with 1μm thickness were successfully fabricated on LaNiO3/Si(100) by the sol-gel method. The effect of different zirconium content of the PLZT anti-ferroelectric thick films on the dielectric and energy-storage properties were studied scientifically. The results show that the structure of the PLZT anti-ferroelectric thick films was not affected, after zirconium content performance enhanced significantly, when ratio is (8/80/20), the energy-storage density (W) and energy-storage efficiency (η) were increased, and the maximum W=23.8J/cm3 and corresponding η=60% were obtained from the PLZT(8/80/20) thick films at 1400 kV/cm.