Single phase vanadium dioxide (VO₂) thin film was fabricated by radio frequcecy magnetron sputtering method on silicon single crystal, the transition magnitude is beyond 2 orders. VO₂ thin film was annealed in nitrogen by rapid thermal annealing method. X ray diffraction, scanning electron microscopy, high resolution transparcy electron microscopy and four pobe method were used to characterize the crystal structure, morophology and electrical properties, respectively. The results show that, the phase transition properties were affected heavely by temperature at rapid thermal annealing mode. The magnitude of phase transition in sheet resistance increases from 2.3 to 2.4 orders when rapid thermal annealing at 300 ℃, and when the temperature beyond 350 ℃, the order of magnitude decrease to lower 1, at 500 ℃ the phase transition disappear. The composition of VO₂ thin films change form VO₂ to V₄O₇. SEM results show that the hole structure in film doesn’t change and the particle size also keep the same size during annealing at different temperature. The results are important for VO₂ application in envirment with fast change of temperature.