Coated conductors are the key practical materials for developing power applications at high temperatures of 77 K and high magnetic fields. The increase of number of buffer layer would result in the increase of the degree of difficulty for controlling growth, microscopy and interface structure. Therefore, simplifying architecture of buffer layer becomes important for the simplification of preparation technics and the reduction of cost for coated conductors. In this paper, we have explored the influence of thermal decomposition and preparation technics of film on the epitaxial growth of SrTiO₃ (STO) buffer layers deposited on textured NiW substrates by chemical solution deposition (CSD) method. The results show that STO thin film with good c-axis texture and smooth surface could be obtained by choosing appropriate precursor solution and introducing seed layer before deposting the final oxide film.