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晶粒尺寸对CVD纯钨在800℃下氧化行为的影响
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1.昆明理工大学;2.北京理工大学

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昆明理工大学分析测试基金(项目号2019M20182230062)


Effect of grain size on the oxidation of CVD pure tungsten at 800℃
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1.Kunming University of Science and Technology;2.Beijing Institute of Technology

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    摘要:

    化学气相沉积法(CVD)制备的金属纯钨在不同表面存在较大的晶粒尺寸差异。从氧化膜层的成长规律、相组成及微观结构方面,研究了在干燥空气、800℃下晶粒尺寸对CVD钨高温氧化行为的影响。结果表明:不同表面氧化膜层厚度的差异是由于细晶粒纯钨在氧化时能更快地形成氧化膜,促进生成连续致密的氧化膜,提高了钨的抗氧化性能,晶粒尺寸对钨的氧化行为影响是正效应。随着细晶区的钨全部被氧化,此时表面和顶面的晶粒尺寸相同,底面和顶面的氧化速率趋于一致,此外,沉积层的氧化速率由于边缘效应的影响而明显增加。

    Abstract:

    The pure tungsten metal prepared by chemical vapor deposition (CVD) have distinct grain size on different surfaces. The high temperature oxidation experiment was carried out in dry air and at 800℃. The effect of grain size on CVD tungsten was studied from the growth curve, phase composition and microstructure of the oxide film. The results show that the fine grain tungsten can form oxide film more quickly during the oxidation process, promote the formation of continuous and compact oxide film, and improve the oxidation resistance of tungsten. The effect of grain size on the oxidation behavior of tungsten is positive. As the tungsten in the fine grain part oxidizes to the interior, the grain size of the surface and the top surface are the same, and the oxidation rate of the bottom and top surface tend to be the same. In addition, the oxidation rate of the deposition layer increases obviously due to the influence of the edge effect.

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张世辉,王开军,胡劲,谭成文,于晓东,段云彪,张维均.晶粒尺寸对CVD纯钨在800℃下氧化行为的影响[J].稀有金属材料与工程,2021,50(11):4073~4078.[Zhang Shihui, Wang Kaijun, Hu Jin, Tan Chengwen, Yu Xiaodong, Duan Yunbiao, Zhang Weijun. Effect of grain size on the oxidation of CVD pure tungsten at 800℃[J]. Rare Metal Materials and Engineering,2021,50(11):4073~4078.]
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历史
  • 收稿日期:2020-11-19
  • 最后修改日期:2021-05-07
  • 录用日期:2021-05-12
  • 在线发布日期: 2021-11-30
  • 出版日期: 2021-11-24