Bismuth stannate (Bi2Sn2O7) synthesized by chemical coprecipitation was used as modified component. The effect of Bi2Sn2O7 doping on the wetting angle of Ag/SnO2 interface was studied by the sessile drop method. The Ag/SnO2(x)-Bi2Sn2O7(y) electrical contact materials were prepared by mechanical alloying technique combined with molding sintering process. The phase structure, electrical and mechanical properties of the materials were characterized by SEM, XRD, OCA, resistance tester, hardness tester and densimeter. The results showed that Bi2Sn2O7 doping can significantly improve the interfacial wettability between Ag and SnO2, and the minimum wetting angle is 82 ° when the mass ratio of Bi2Sn2O7 to SnO2 was 2:10. The lower resistivity of Ag/SnO2(x)-Bi2Sn2O7(y) electrical contact materials were achieved with a decreased wetting angle between Ag and SnO2. Especially when the content of Bi2Sn2O7 is 2wt.%, the resistivity reaches the lowest value2.28 (μΩ·cm), and the relative density (96.96%)and hardness(90.0 HV0.3) reach the maximum value.