In this paper, we have grown the InN films with high orientation and varieties typical micrographs on Si (100) substrate by radio-frequency (RF) sputtering, while Indium was used as Indium target, and Nitrogen was used as Nitrogen source. The X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) show that all the diffraction peaks are identified to be associated with the wurtzite phase of InN, with high orientation of (101), (100) and (002). The Scanning Electron Microscope (SEM) and Energy Diffraction Spectrum (EDS) reveal that the high-quality crystal films of InN with various typical microstructures could be deposited, especially the standard of the hexagon at 60 W and 0.4 Pa. We also calculate the stress of InN films in E₂ (High) by Raman spectra with an excitative wave length λ= 633 nm at room temperature, the values of the stress are different due to various microstructures. The A₁ (LO) peaks are lower due to the high mobility. The calculated energies are 1.07 eV, 1.13 eV and 1.32 eV. The XRD, SEM, XPS, Raman spectra, Hall and UV absorption characterizations reveal that we could grow different microstructures of thin films to adapt the various requirements of sensors and other devices.